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AOK42S60
General Description
600V 39A α MOS
Product Summary
TM
Power Transistor
The AOK42S60 has been fabricated using the advanced
α MOS TM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low R DS(on) , Q g and E OSS along with
guaranteed avalanche capability this device can be
V DS @ T j,max
I DM
R DS(ON),max
Q g,typ
E oss @ 400V
700V
166A
0.099 ?
40nC
9.2 μ J
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested
100% R g Tested
For Halogen Free add "L" suffix to part number:
AOK42S60L
D
G
S
Absolute Maximum Ratings T A =25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
AOK42S60
600
±30
Units
V
V
Continuous Drain
Current
Pulsed Drain Current C
T C =25°C
T C =100°C
I D
I DM
39
25
166
A
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
I AR
E AR
E AS
11
234
1345
A
mJ
mJ
Power Dissipation B
T C =25°C
Derate above 25 o C
P D
417
3.3
W
W/ o C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
dv/dt
T J , T STG
100
20
-55 to 150
V/ns
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
T L
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev0: Jan 2012
Symbol
R θ JA
R θ CS
R θ JC
www.aosmd.com
AOK42S60
40
0.5
0.3
Units
°C/W
°C/W
°C/W
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